
Research and development · Materials ScienceTechnologies and engineering · NanotechnologyResearch and development · Nanotechnology
Thin RuO2 films pave the way for fast memory
An international team of scientists has demonstrated that ultrathin ruthenium dioxide films exhibit antiferromagnetism, paving the way for the development of faster and more compact next-generation magnetic memory devices. These materials have the potential to significantly increase the speed and energy efficiency of data storage.
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